2020/09/23 by Saroj Kanta Patra, Stefan Schulz, Patra, Saroj Kanta +1
Engineering · Physics and Astronomy · #FOS: Physical sciences #GaN-based semiconductor devices and materials #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Nanowire Synthesis and Applications #Semiconductor Quantum Structures and Devices
paper · pdf · doi:10.48550/arxiv.2009.11161
openalex publication_date 2020/09/23 · openalex created_date 2022/07/25 · openalex updated_date 2026/07/28
We analyze the potential of the c-plane InGaN/GaN quantum dots for\npolarization entangled photon emission by means of an atomistic many-body\nframework. Special attention is paid to the impact of random alloy fluctuations\non the excitonic fine structure and the excitonic binding energy. Our\ncalculations show that c-plane InGaN/GaN quantum dots are ideal candidates\nfor high temperature entangled photon emission as long as the underlying\nC3v-symmetry is preserved. However, when assuming random alloy\nfluctuations in the dot, our atomistic calculations reveal that while the large\nexcitonic binding energies are only slightly affected, the C3v symmetry is\nbasically lost due to the alloy fluctuations. We find that this loss in\nsymmetry significantly impacts the excitonic fine structure. The observed\nchanges in fine structure and the accompanied light polarization\ncharacteristics have a detrimental effect for polarization entangled photon\npair emission via the biexciton-exciton cascade. Here, we also discuss possible\nalternative schemes that benefit from the large excitonic binding energies, to\nenable non-classical light emission from c-plane InGaN/GaN quantum dots at\nelevated temperatures.\n