Size-Dependent Fine-Structure Splitting in Self-OrganizedInAs/GaAsQuantum Dots

2005/12/15 by R. Seguin, A. Schliwa, S. Rodt +5 · 5 citations
Materials Science · Physics and Astronomy · #Blueshift #Condensed matter physics #Exciton #Materials science #Nanotechnology #Optoelectronics #Photoluminescence #Physics #Quantum Dots Synthesis And Properties #Quantum and electron transport phenomena #Quantum dot #Semiconductor Quantum Structures and Devices #Sign (mathematics) #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevlett.95.257402

published as Phys. Rev. Lett. 95, 257402 (2005) · 5 pages, 5 figures

openalex publication_date 2005/12/15 · arxiv created 2006/10/16 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

A systematic variation of the exciton fine-structure splitting with quantum dot size in single InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition is observed. The splitting increases from \ensuremath-80 to as much as 520 \ensuremathμeV with quantum dot size. A change of sign is reported for small quantum dots. Model calculations within the framework of eight-band k\ifmmode⋅\else\textperiodcentered\fip theory and the configuration interaction method were performed. Different sources for the fine-structure splitting are discussed, and piezoelectricity is pinpointed as the only effect reproducing the observed trend.

Citations

• Regulated and Entangled Photons from a Single Quantum Dot

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