2014/05/23 by G. Juška, G. Juska, V. Dimastrodonato +11
Engineering · Materials Science · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #Condensed matter physics #Heterojunction #Materials science #Nanostructure #Nanotechnology #Optoelectronics #Photoluminescence #Physics #Quantum #Quantum Dots Synthesis And Properties #Quantum dot #Quantum mechanics #Quantum point contact #Quantum well #Quantum wire #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.89.205430
openalex publication_date 2014/05/23 · arxiv created 2014/07/02 · arxiv updated 2014/07/03 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
A study of previously overlooked structural and optical properties of InGaAs heterostructures grown on (111)B oriented GaAs substrates patterned with inverted 7.5-\ensuremathμm pitch pyramidal recesses is presented. First, the composition of the confinement barrier material (GaAs in this work) and its growth temperature are shown as some of the key parameters that determine the main quantum dot properties, including nontrivial emission energy dependence, excitonic pattern, and unusual photoluminescence energetic ordering of the InGaAs ensemble nanostructures. Second, the formation of a formerly unidentified type of InGaAs nanostructures---three corner quantum dots---is demonstrated in our structures next to the well-known ones (a quantum dot and three lateral quantum wires and quantum wells). The findings show the complexity of the pyramidal quantum dot system which strongly depends on the sample design and which should be considered when selecting highly symmetric (central) quantum dots in newly designed experimental projects.