2009/06/01 by L. Mereni, L. O. Mereni, V. Dimastrodonato +3 · 1 citation
Chemistry · Engineering · Physics and Astronomy · #Chemistry #Condensed matter physics #Epitaxy #Gallium arsenide #Materials science #Metalorganic vapour phase epitaxy #Nanotechnology #Optoelectronics #Phase (matter) #Photonic Crystals and Applications #Physics #Quantum dot #Quantum dot laser #Semiconductor #Semiconductor Lasers and Optical Devices #Semiconductor Quantum Structures and Devices #Semiconductor laser theory #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.3147213
published as Applied Physics Letters 94, 223121 (2009) · 12 pages, 3 figures
openalex publication_date 2009/06/01 · arxiv created 2009/06/22 · arxiv updated 2015/05/13 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
In this letter we report on the optical properties of site-controlled InGaAs quantum dots with GaAs barriers grown in pyramidal recesses by metalorganic vapor phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of quantum dots is found to be unusually narrow, with a standard deviation of 1.19 meV and the spectral purity of emission lines from individual dots is found to be very high (18–30 μeV), in contrast with other site-controlled dot systems.