2008/11/10 by Oliver Marquardt, Daniel Mourad, Stefan Schulz +4
Materials Science · Physics and Astronomy · #Band gap #Condensed matter physics #Conduction band #Coupling (piping) #Delocalized electron #Electronic band structure #Electronic structure #Formalism (music) #Ga2O3 and related materials #GaN-based semiconductor devices and materials #Materials science #Physics #Quantum dot #Quantum mechanics #Semiconductor Quantum Structures and Devices #Tight binding #Valence (chemistry) #Valence band #Wave function #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.78.235302
arxiv created 2008/11/10 · openalex publication_date 2008/12/01 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
In this work we present a comparison of multiband k\ensuremath⋅p models, the effective-bond-orbital approach, and an empirical tight-binding model to calculate the electronic structure for the example of a truncated pyramidal GaN/AlN self-assembled quantum dot with a zinc-blende structure. For the system under consideration, we find very good agreement between the results of the microscopic models and the eight-band k\ensuremath⋅p formalism, in contrast to a 6+2-band k\ensuremath⋅p model, where conduction band and valence band are assumed to be decoupled. This indicates a surprisingly strong coupling between conduction- and valence-band states for the wide-band-gap materials GaN and AlN. Special attention is paid to the possible influence of the weak spin-orbit coupling on the localized single-particle wave functions of the investigated structure.