1997/10/29 by Craig Pryor · 3 citations
Engineering · Mathematics · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #Atomic physics #Band gap #Binding energy #Condensed matter physics #Conduction band #Effective mass (spring–mass system) #Electron #Electronic band structure #Excited state #Exciton #Ground state #Hamiltonian (control theory) #Materials science #Mathematics #Physics #Quantum and electron transport phenomena #Quantum dot #Quantum mechanics #Semiconductor Quantum Structures and Devices #Strain (injury) #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.57.7190
8 pages, 7 figures, revtex, epsf
arxiv created 1997/10/29 · openalex publication_date 1998/03/15 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
The electronic structure of pyramidal shaped InAs/GaAs quantum dots is calculated using an eight-band strain-dependent k\ensuremath⋅p Hamiltonian. The influence of strain on band energies and the conduction-band effective mass are examined. Single-particle bound-state energies and exciton binding energies are computed as functions of island size. The eight-band results are compared with those for one, four, and six bands, and with results from a one-band approximation in which meff(\stackrel\ensuremath→r) is determined by the local value of the strain. The eight-band model predicts a lower ground-state energy and a larger number of excited states than the other approximations.