2004/05/06 by R. Seguin, S. Rodt, Sven Rodt +7 · 2 citations
Engineering · Physics and Astronomy · #Condensed matter physics #GaN-based semiconductor devices and materials #Materials science #Nanotechnology #Nanowire Synthesis and Applications #Optoelectronics #Physics #Quantum dot #Semiconductor Quantum Structures and Devices #Wide-bandgap semiconductor #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.1751214
published as Appl. Phys. Lett. 84, 4023 (2004) · 3 pages, 4 figures
openalex publication_date 2004/05/06 · arxiv created 2006/10/16 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Cathodoluminescence spectra employing a shadow mask technique of InGaN layers grown by metalorganic chemical vapor deposition on Si(111) substrates are reported. Sharp lines originating from InGaN quantum dots are observed. Temperature dependent measurements reveal thermally induced carrier redistribution between the quantum dots. Spectral diffusion is observed and was used as a tool to correlate up to three lines that originate from the same quantum dot. Variation of excitation density leads to identification of exciton and biexciton. Binding and anti-binding complexes are discovered.