2017/12/21 by Mallikarjuna Gurram, M Gurram, Siddhartha Omar +3
Materials Science · Physics and Astronomy · #Boron nitride #Chemical and Physical Properties of Materials #Graphene #Graphene research and applications #Hexagonal boron nitride #Quantum and electron transport phenomena #Spin (aerodynamics) #Spin polarization #Spin pumping #Spin valve #Spintronics #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1088/2053-1583/aac34d
published as 2D Materials 5, 032004 (2018) · Review, Author submitted manuscript - draft; 25 pages, 8 figures
arxiv created 2017/12/21 · openalex created_date 2018/01/05 · openalex publication_date 2018/05/09 · arxiv updated 2018/06/26 · openalex updated_date 2026/08/05
The current research in graphene spintronics strives for achieving a long spin lifetime, and efficient spin injection and detection in graphene. In this article, we review how hexagonal boron nitride (hBN) has evolved as a crucial substrate, as an encapsulation layer, and as a tunnel barrier for manipulation and control of spin lifetimes and spin injection/detection polarizations in graphene spin valve devices. First, we give an overview of the challenges due to conventional SiO 2 /Si substrate for spin transport in graphene followed by the progress made in hBN based graphene heterostructures. Then we discuss in detail the shortcomings and developments in using conventional oxide tunnel barriers for spin injection into graphene followed by introducing the recent advancements in using the crystalline single/bi/tri-layer hBN tunnel barriers for an improved spin injection and detection which also can facilitate two-terminal spin valve and Hanle measurements at room temperature, and are of technological importance. A special case of bias induced spin polarization of contacts with exfoliated and chemical vapour deposition (CVD) grown hBN tunnel barriers is also discussed. Further, we give our perspectives on utilizing graphene-hBN heterostructures for future developments in graphene spintronics.