2011/10/06 by Takehiro Yamaguchi, Satoru Masubuchi, Kazuyuki Iguchi +2 · 1 citation
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Atomic layer deposition #Chemistry #Condensed matter physics #Deposition (geology) #Ferromagnetism #Graphene #Graphene research and applications #Layer (electronics) #Magnetic field #Magnetoresistance #Materials science #Molecule #Monolayer #Nanotechnology #Optoelectronics #Organic chemistry #Perylene #Quantum and electron transport phenomena #Semiconductor materials and devices #Spin (aerodynamics) #Tunnel magnetoresistance #cond-mat.mes-hall
paper · pdf · doi:10.1016/j.jmmm.2011.09.031
published as J. Magn. Magn. Mater. Vol. 324, P 849-852 (2012) · 14 pages, 3 figures, accepted to Journal of Magnetism and Magnetic Materials
arxiv created 2011/10/06 · openalex publication_date 2011/10/12 · arxiv updated 2011/11/17 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We demonstrate electrical tunnel spin injection from a ferromagnet to graphene through a high-quality Al2O3 grown by atomic layer deposition (ALD). The graphene surface is functionalized with a self-assembled monolayer of 3,4,9,10-perylene tetracarboxylic acid (PTCA) to promote adhesion and growth of Al2O3 with a smooth surface. Using this composite tunnel barrier of ALD-Al2O3 and PTCA, a spin injection signal of 30 ohm has been observed from non-local magnetoresistance measurements at 45 K, revealing potentially high performance of ALD-Al2O3/PTCA tunnel barrier for spin injection into graphene.