2004/01/01 by A. S. Mayorov, Alexander S. Mayorov, Roman V. Gorbachev +19 · 3 citations
Chemistry · Materials Science · Physics and Astronomy · Social Sciences · #Advanced Physical and Chemical Molecular Interactions #Graphene research and applications #Literacy and Educational Practices #Quantum and electron transport phenomena #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1021/nl200758b
published as Nano Lett. 11, 2396-2399 (2011)
openalex publication_date 2004/01/01 · arxiv created 2011/06/10 · arxiv updated 2011/06/13 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/09
Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport at a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.