2013/02/28 by Nojoon Myoung, Kyungchul Seo, Seung Joo Lee +2
Materials Science · Physics and Astronomy · #2D Materials and Applications #Graphene research and applications #Topological Materials and Phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1021/nn402919d
published as ACS Nano 7, 7021 (2013) · 19 pages, 5 figures
arxiv created 2013/07/23 · openalex publication_date 2013/07/23 · arxiv updated 2013/09/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is enhanced by using an armchair graphene nanoribbon as an electrode. Moreover, we report spin-dependent tunneling current of the graphene/MoS2 heterostructures. When an atomically thin MoS2 layer sandwiched between graphene electrodes becomes magnetic, Dirac fermions with different spins feel different heights of the tunnel barrier, leading to spin-dependent tunneling. Our finding will develop the present graphene heterostructures for electronic devices by improving the device performance and by adding the possibility of spintronics based on graphene.