2019/04/05 by Hokyeong Jeong, Dong Yeong Kim, Jaewon Kim +7 · 1 citation
Materials Science · Engineering · #Graphene research and applications #2D Materials and Applications #Advancements in Semiconductor Devices and Circuit Design
paper · pdf · doi:10.1038/s41598-019-42236-4
openalex publication_date 2019/04/05 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/04
Abstract We demonstrate wafer-scale growth of high-quality hexagonal boron nitride (h-BN) film on Ni(111) template using metal-organic chemical vapor deposition (MOCVD). Compared with inert sapphire substrate, the catalytic Ni(111) template facilitates a fast growth of high-quality h-BN film at the relatively low temperature of 1000 °C. Wafer-scale growth of a high-quality h-BN film with Raman E 2g peak full width at half maximum (FWHM) of 18~24 cm −1 is achieved, which is to the extent of our knowledge the best reported for MOCVD. Systematic investigation of the microstructural and chemical characteristics of the MOCVD-grown h-BN films reveals a substantial difference in catalytic capability between the Ni(111) and sapphire surfaces that enables the selective-area growth of h-BN at pre-defined locations over a whole 2-inch wafer. These achievement and findings have advanced our understanding of the growth mechanism of h-BN by MOCVD and will contribute an important step toward scalable and controllable production of high-quality h-BN films for practical integrated two-dimensional materials-based systems and devices.