2007/08/16 by Yoichi Kubota, Kenji Watanabe, Osamu Tsuda +1 · 6 citations
Physics and Astronomy · Materials Science · #GaN-based semiconductor devices and materials #Ga2O3 and related materials #ZnO doping and properties
paper · doi:10.1126/science.1144216
openalex publication_date 2007/08/16 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/25
Materials emitting light in the deep ultraviolet region around 200 nanometers are essential in a wide-range of applications, such as information storage technology, environmental protection, and medical treatment. Hexagonal boron nitride (hBN), which was recently found to be a promising deep ultraviolet light emitter, has traditionally been synthesized under high pressure and at high temperature. We successfully synthesized high-purity hBN crystals at atmospheric pressure by using a nickel-molybdenum solvent. The obtained hBN crystals emitted intense 215-nanometer luminescence at room temperature. This study demonstrates an easier way to grow high-quality hBN crystals, through their liquid-phase deposition on a substrate at atmospheric pressure.