Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal

2004/05/23 by Kenji Watanabe, Takashi Taniguchi, H. Kanda +1 · 11 citations
Materials Science · Physics and Astronomy · #Ga2O3 and related materials #GaN-based semiconductor devices and materials #ZnO doping and properties

paper · doi:10.1038/nmat1134

crossref issued 2004/05/23 · crossref published 2004/05/23 · crossref published-online 2004/05/23 · openalex publication_date 2004/05/23 · crossref created 2004/05/24 · crossref published-print 2004/06/01 · crossref deposited 2022/07/06 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/02 · crossref indexed 2026/08/05

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• Boron Nitride Nanotubes
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• Tuning colour centres at a twisted hexagonal boron nitride interface
• Defect-related photoluminescence of hexagonal boron nitride
• Ultrathin high-temperature oxidation-resistant coatings of hexagonal boron nitride
• Ab InitioFinite-Temperature Excitons
• Boron nitride [wikipedia]
• Light-emitting diode [wikipedia]