2014/10/07 by Florian Godel, F. Godel, M. Venkata Kamalakar +6 · 2 citations
Materials Science · Physics and Astronomy · #Biasing #Cobalt #Condensed matter physics #Electrical engineering #Epitaxy #Fabrication #Ferromagnetism #Graphene #Graphene research and applications #Layer (electronics) #Magnetic field #Magnetic properties of thin films #Magnetoresistance #Materials science #Metallurgy #Nanotechnology #Nickel #Optoelectronics #Quantum and electron transport phenomena #Spin valve #Tunnel magnetoresistance #Voltage #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.4898587
arxiv created 2014/10/07 · openalex publication_date 2014/10/13 · arxiv updated 2015/06/23 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We report on the fabrication and characterization of vertical spin-valve structures using a thick epitaxial MgO barrier as spacer layer and a graphene-passivated Ni film as bottom ferromagnetic electrode. The devices show robust and scalable tunnel magnetoresistance, with several changes of sign upon varying the applied bias voltage. These findings are explained by a model of phonon-assisted transport mechanisms that relies on the peculiarity of the band structure and spin density of states at the hybrid graphene|Ni interface.