Single-shot measurement and tunnel-rate spectroscopy of a Si/SiGe few-electron quantum dot

2010/10/31 by Madhu Thalakulam, C. B. Simmons, B. J. Van Bael +6 · 3 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Atomic physics #Condensed matter physics #Coulomb #Electron #Excited state #Heterojunction #Materials science #Optoelectronics #Physics #Quantum and electron transport phenomena #Quantum dot #Quantum mechanics #Quantum tunnelling #Semiconductor materials and devices #Spectroscopy #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevb.84.045307

published as Phys. Rev. B 84, 045307 (2011) · 9 pages

openalex publication_date 2011/07/11 · arxiv created 2011/07/13 · arxiv updated 2013/05/29 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We investigate the tunnel rates and energies of excited states of small numbers of electrons in a quantum dot fabricated in a Si/SiGe heterostructure. Tunnel rates for loading and unloading electrons are found to be strongly energy dependent, and they vary significantly between different excited states. We show that this phenomenon enables charge sensing measurements of the average electron occupation that are analogous to Coulomb diamonds. Excited-state energies can be read directly from the plot, and we develop a rate model that enables a quantitative understanding of the relative sizes of different electron tunnel rates.

Citations

• Fabrication and characterization of electrostatic Si∕SiGe quantum dots with an integrated read-out channel
• Addition spectrum of a lateral dot from Coulomb and spin-blockade spectroscopy
• Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots
• Single-shot read-out of an individual electron spin in a quantum dot

Cited by

• Identifying single electron charge sensor events using wavelet edge detection
• Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures
• Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot

Related

• Excited-state spectroscopy on a nearly-closed quantum dot via charge detection
• Undoped accumulation-mode Si/SiGe quantum dots
• Determination of the tunnel rates through a few-electron quantum dot
• Single-shot readout of electron spin states in a quantum dot using spin-dependent tunnel rates
• Probing single charge fluctuations in a semiconductor with laser spectroscopy on a quantum dot