2005/04/04 by M. R. Sakr, Hong-Wen Jiang, E. Yablonovitch +3 · 1 citation
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.2136436
3 pages, 4 figs
arxiv created 2005/04/04 · openalex publication_date 2005/11/18 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
A nontraditional fabrication technique is used to produce quantum dots with read-out channels in silicon/silicon–germanium two-dimensional electron gases. The technique utilizes Schottky gates, placed on the sides of a shallow etched quantum dot, to control the electronic transport process. An adjacent quantum point contact gate is integrated to the side gates to define a read-out channel, and thus allow for noninvasive detection of the electronic occupation of the quantum dot. Reproducible and stable Coulomb oscillations and the corresponding jumps in the read-out channel resistance are observed at low temperatures. The fabricated dot combined with the read-out channel represents a step toward the spin-based quantum bit in Si∕SiGe heterostructures.