2011/09/30 by Zhan Shi, C. B. Simmons, J. R. Prance +6
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Displacement (psychology) #Excited state #Magnetic field #Measure (data warehouse) #Quantum and electron transport phenomena #Quantum dot #Quantum dot laser #Semiconductor Quantum Structures and Devices #Spectrum (functional analysis) #Spin (aerodynamics) #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.3666232
published as Appl. Phys. Lett. 99, 233108 (2011) · 4 pages with 3 figures
openalex publication_date 2011/12/05 · arxiv created 2011/12/11 · arxiv updated 2013/08/14 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We measure the excited-state spectrum of a Si/SiGe quantum dot as a function of in-plane magnetic field and identify the spin of the lowest three eigenstates in an effective two-electron regime. We extract the singlet-triplet splitting, an essential parameter for spin qubits, from the data. We find it to be tunable by lateral displacement of the dot, which is realized by changing two gate voltages on opposite sides of the device. We present calculations showing the data are consistent with a spectrum in which the first excited state of the dot is a valley-orbit state.