2011/12/31 by C. Payette, K. Wang, P. J. Koppinen +3 · 1 citation
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Charge (physics) #Charge carrier #Electron #Heterojunction #Quantum and electron transport phenomena #Quantum dot #Quantum dot laser #Quantum heterostructure #Quantum point contact #Quantum well #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall #quant-ph
paper · pdf · doi:10.1063/1.3678043
published as Appl. Phys. Lett. 100, 043508 (2012) · Related papers at http://pettagroup.princeton.edu
openalex publication_date 2012/01/23 · arxiv created 2012/03/21 · arxiv updated 2013/07/24 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We perform quantum Hall measurements on three types of commercially available modulation-doped Si/SiGe heterostructures to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we are able to achieve electron gases with charge densities 1–3 × 1011/cm2 and mobilities in excess of 100 000 cm2/Vs. Double quantum dot devices fabricated on these heterostructures show clear evidence of single charge transitions as measured in dc transport and charge sensing and exhibit electron temperatures of 100 mK in the single quantum dot regime.