2008/06/03 by Wang-Kong Tse, E. H. Hwang, S. Das Sarma
Materials Science · Physics and Astronomy · #2D Materials and Applications #Ballistic conduction #Electron #Graphene #Graphene research and applications #Hot electron #Inelastic scattering #Jump #Mean free path #Phonon #Quantum and electron transport phenomena #Scattering #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.2956669
published as Appl. Phys. Lett. 93, 023128 (2008) · 4 pages
arxiv created 2008/06/03 · openalex publication_date 2008/07/14 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We theoretically study the inelastic scattering rate and the carrier mean free path for energetic hot electrons in graphene, including both electron-electron and electron-phonon interactions. Taking account of optical phonon emission and electron-electron scattering, we find that the inelastic scattering time τ∼10−2–10−1ps and the mean free path l∼10–102nm for electron densities n=1012–1013cm−2. In particular, we find that the mean free path exhibits a finite jump at the phonon energy 200meV due to electron-phonon interaction. Our results are directly applicable to device structures where ballistic transport is relevant with inelastic scattering dominating over elastic scattering.