2008/05/31 by Jiyong Fu, J. Y. Fu, M. W. Wu · 4 citations
Materials Science · Physics and Astronomy · #Asymmetry #Condensed matter physics #Coupling (piping) #Electron #Electronic structure #Materials science #Optoelectronics #Physics #Physics of Superconductivity and Magnetism #Point reflection #Quantum and electron transport phenomena #Quantum mechanics #Semiconductor #Spin–orbit interaction #Wide-bandgap semiconductor #Wurtzite crystal structure #Zinc #ZnO doping and properties #cond-mat.mtrl-sci #cond-mat.other
paper · pdf · doi:10.1063/1.3018600
published as J. Appl. Phys. 104, 093712 (2008). · 9 pages, 6 figures, to be published in J. Appl. Phys
arxiv created 2008/09/20 · openalex publication_date 2008/11/01 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Using group theory and Kane-type k⋅p model together with the Löwdin partition method, we derive the expressions for the spin-orbit coupling of electrons and holes, including the linear-k Rashba term due to the intrinsic structure inversion asymmetry and the cubic-k Dresselhaus term due to the bulk inversion asymmetry in wurtzite semiconductors. The coefficients of the electron and hole Dresselhaus terms of ZnO and GaN in wurtzite structure and GaN in zinc-blende structure are calculated using the nearest-neighbor sp3 and sp3s∗ tight-binding models, respectively.