2005/10/31 by Ikai Lo, W. T. Wang, M. H. Gau +5 · 1 citation
Engineering · Physics and Astronomy · #GaN-based semiconductor devices and materials #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.72.245329
12 pages, 4 figures (total 16 pages)
arxiv created 2005/10/31 · openalex publication_date 2005/12/21 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
A different mechanism (\ensuremathΔC1\text\ensuremath-\ensuremathΔC3 coupling) accounts for the spin splitting of wurtzite GaN, that originated from the intrinsic wurtzite effects (band folding and structure inversion asymmetry). The band-folding effect generates two conduction bands (\ensuremathΔC1 and \ensuremathΔC3), in which p-wave probability has tremendous change when kz approaches the anticrossing zone. The spin-splitting energy induced by the \ensuremathΔC1\text\ensuremath-\ensuremathΔC3 coupling and wurtzite structure inversion asymmetry is much larger than that evaluated by traditional Rashba or Dresselhaus effects. When we apply the coupling to GaN∕AlN quantum wells, we find that the spin-splitting energy is sensitively controllable by an electric field. Based on the mechanism, we proposed a p-wave-enhanced spin-polarized field effect transistor, made of InxGa_1\ensuremath-xN∕InyAl_1\ensuremath-yN, for spintronics application.