2009/06/03 by W. F. Koehl, M. H. Wong, C. Poblenz +4 · 2 citations
Materials Science · Physics and Astronomy · #Chemical vapor deposition #Doping #GaN-based semiconductor devices and materials #Gallium nitride #Molecular beam epitaxy #Polarization (electrochemistry) #Quantum and electron transport phenomena #Spin polarization #Wide-bandgap semiconductor #Wurtzite crystal structure #ZnO doping and properties #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.3194781
16 pages, 3 figures
arxiv created 2009/06/03 · openalex publication_date 2009/08/17 · arxiv updated 2015/05/13 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
Electrically generated spin polarization is probed directly in bulk GaN using Kerr rotation spectroscopy. A series of n-type GaN epilayers are grown in the wurtzite phase both by molecular beam epitaxy and metalorganic chemical vapor deposition with a variety of doping densities chosen to broadly modulate the transverse spin lifetime, T2∗. The spin polarization is characterized as a function of electrical excitation energy over a range of temperatures. Despite weak spin-orbit interactions in GaN, a current-induced spin polarization is observed in the material at temperatures of up to 200 K.