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All-electrical time-resolved spin generation and spin manipulation in n-InGaAs

2013/12/17 by I. Stepanov, S. Kuhlen, M. Ersfeld +2
Physics and Astronomy · #Dephasing #Electric field #Faraday effect #Magnetic field #Magnetic properties of thin films #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Spin (aerodynamics) #Spin Hall effect #Spin engineering #Spin polarization #Spinplasmonics #cond-mat.mes-hall

paper · pdf · doi:10.1063/1.4864468

published as Appl. Phys. Lett. 104, 062406 (2014) · 5 pages, 4 figures

arxiv created 2013/12/17 · openalex publication_date 2014/02/10 · arxiv updated 2014/02/12 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

We demonstrate all-electrical spin generation and subsequent manipulation by two successive electric field pulses in an n-InGaAs heterostructure in a time-resolved experiment at zero external magnetic field. The first electric field pulse along the [11¯0] crystal axis creates a current-induced spin polarization (CISP) which is oriented in the plane of the sample. The subsequent electric field pulse along [110] generates a perpendicular magnetic field pulse leading to a coherent precession of this spin polarization with 2-dimensional electrical control over the final spin orientation. Spin precession is probed by time-resolved Faraday rotation. We determine the build-up time of CISP during the first field pulse and extract the spin dephasing time and internal magnetic field strength during the spin manipulation pulse.

Citations