Spin–orbit coupling in bulk GaAs

2007/12/31 by Jiyong Fu, J. Y. Fu, M. Q. Weng +2 · 2 citations
Physics and Astronomy · #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mtrl-sci #cond-mat.other

paper · pdf · doi:10.1016/j.physe.2008.02.006

published as Physica E 40, 2890 (2008). · 8 pages, 3 figures, Physica E, in press

arxiv created 2008/02/01 · openalex publication_date 2008/04/04 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We study the spin-orbit coupling in the whole Brillouin zone for GaAs using both the sp³s^∗d⁵ and sp³s^∗ nearest-neighbor tight-binding models. In the Γ-valley, the spin splitting obtained is in good agreement with experimental data. We then further explicitly present the coefficients of the spin splitting in GaAs L and X valleys. These results are important to the realization of spintronic device and the investigation of spin dynamics far away from equilibrium.

Citations

• Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
• Spintronics: Fundamentals and applications

Cited by

• Spin-orbit coupling in bulk ZnO and GaN
• L -valley electron g-factor in bulk GaAs and AlAs

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