2008/06/30 by K. Shen, M. Q. Weng, M. W. Wu
Physics and Astronomy · #GaN-based semiconductor devices and materials #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.2986151
published as J. Appl. Phys. 104, 063719 (2008). · 4 pages, 1 figure, To be published in J. App. Phys. 104, 2008
arxiv created 2008/08/19 · openalex publication_date 2008/09/15 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We study the Landé g-factor of conduction electrons in the L-valley of bulk GaAs and AlAs by using a three-band k⋅p model together with the tight-binding model. We find that the L-valley g-factor is highly anisotropic and can be characterized by two components g⊥ and g∥. g⊥ is close to the free electron Landé factor but g∥ is strongly affected by the remote bands. The contribution from remote bands on g∥ depends on how the remote bands are treated. However, when the magnetic field is in the Voigt configuration, which is widely used in the experiments, different models give almost identical g-factor.