Demonstration of Rashba spin splitting in GaN-based heterostructures

2005/09/08 by W. Weber, Sergey Ganichev, S. D. Ganichev +12 · 5 citations
Physics and Astronomy · #GaN-based semiconductor devices and materials #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.other

paper · pdf · doi:10.1063/1.2158024

7 pages, 3 figures

arxiv created 2005/09/08 · openalex publication_date 2005/12/20 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The circular photogalvanic effect, induced by infrared radiation, has been observed in (0001)-oriented n-GaN low dimensional structures. The photocurrent changes sign upon reversing the radiation helicity demonstrating the existence of spin splitting of the conduction band in k space in this type of materials. The observation suggests the presence of a sizeable Rashba type of spin splitting, caused by the built-in asymmetry at the AlGaN∕GaN interface.

Citations

• Oscillatory effects and the magnetic susceptibility of carriers in inversion layers

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• Beatings of ratchet current magneto-oscillations in GaN-based grating gate structures: Manifestation of spin-orbit band splitting
• Theory of electron spin relaxation in ZnO