Quantum ratchet effects induced by terahertz radiation in GaN-based two-dimensional structures

2008/04/30 by W. Weber, L. E. Golub, S. N. Danilov +13 · 82 citations
Engineering · Physics and Astronomy · #Atomic physics #Condensed matter physics #Excited state #GaN-based semiconductor devices and materials #Heterojunction #Materials science #Optics #Optoelectronics #Physics #Quantum #Quantum dot #Quantum mechanics #Radiation #Ratchet #Ratchet effect #Semiconductor Quantum Structures and Devices #Terahertz radiation #Terahertz technology and applications #Wurtzite crystal structure #Zinc #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevb.77.245304

published in Physical Review B 77(24) (American Physical Society) · technical reasons

arxiv created 2008/05/07 · openalex publication_date 2008/06/04 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

Photogalvanic effects are observed and investigated in wurtzite (0001)-oriented GaN/AlGaN low-dimensional structures excited by terahertz radiation. The structures are shown to represent linear quantum ratchets. Experimental and theoretical analysis exhibits that the observed photocurrents are related to the lack of an inversion center in the GaN-based heterojunctions.

Citations

• Semiclassical theories of the anomalous Hall effect
• Demonstration of Rashba spin splitting in GaN-based heterostructures

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• Terahertz Magnetospectroscopy of Cyclotron Resonances from Topological Surface States in Thick Films of CdxHg1−xTe
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