2006/01/23 by M. O. Nestoklon, L. E. Golub, E. L. Ivchenko · 7 citations
Engineering · Physics and Astronomy · #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #cond-mat.dis-nn #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.73.235334
published as Phys. Rev. B 73, 235334 (2006) · 10 pages, 5 figures
arxiv created 2006/01/23 · openalex publication_date 2006/06/19 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Spin and valley-orbit splittings are calculated in symmetric SiGe∕Si∕SiGe quantum wells (QWs) by using the tight-binding approach. In accordance with the symmetry considerations an existence of spin splitting of electronic states in perfect QWs with an odd number of Si atomic planes is microscopically demonstrated. The spin splitting oscillates with QW width and these oscillations related to the intervalley reflection of an electron wave from the interfaces. It is shown that the splittings under study can efficiently be described by an extended envelope-function approach taking into account the spin- and valley-dependent interface mixing. The obtained results provide a theoretical base to the experimentally observed electron spin relaxation times in SiGe∕Si∕SiGe QWs.