2007/12/21 by M. O. Nestoklon, E. L. Ivchenko, J. -M. Jancu +2 · 81 citations
Engineering · Mathematics · Physics and Astronomy · #Condensed matter physics #Electric field #Electron #Hamiltonian (control theory) #Magnetic field #Mathematics #Physics #Quantum and electron transport phenomena #Quantum mechanics #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #Wave function #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.77.155328
published in Physical Review B 77(15) (American Physical Society) · 8 pages, 3 figures
arxiv created 2007/12/21 · openalex publication_date 2008/04/28 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
Effect of electric field on spin splitting in SiGe quantum wells (QWs) has been theoretically studied. Microscopic calculations of valley and spin splittings are performed in the efficient sp3d5s* tight-binding model. In accordance with the symmetry considerations, the electric field not only modifies the interface-induced spin splitting but also gives rise to a Rashba-type contribution to the effective two-dimensional electron Hamiltonian. Both the valley and spin splittings oscillate as a function of the QW width due to intervalley reflection of the electron wave off the interfaces. The oscillations of splitting are suppressed in rather low electric fields. The tight-binding calculations have been analyzed by using the generalized envelope-function approximation extended to asymmetrical QWs.