2019/01/28 by I. D. Avdeev, Ivan Avdeev · 5 citations
Engineering · Materials Science · Mathematics · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #Chalcogenide Semiconductor Thin Films #Composite material #Condensed matter physics #Cross section (physics) #Geometry #Materials science #Mathematics #Nanotechnology #Nanowire #Physics #Quantum Dots Synthesis And Properties #Quantum mechanics #Range (aeronautics) #Section (typography) #Selenide #Symmetry (geometry) #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.99.195303
published in Physical review. B./Physical review. B 99(19) (American Physical Society) · 7 pages, 6 figures, 1 table
arxiv created 2019/01/28 · openalex publication_date 2019/05/13 · arxiv updated 2019/05/22 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We study the cross-section shape and size effects on the valley splitting in PbSe nanowires within the framework of empirical sp3d5s* tight-binding method. We consider idealized prismatic nanowires, grown along [110], with the cross-section shape varying from rectangular (terminated by 001 and 110 facets) to rhombic (terminated mostly by 111 facets). The valley splitting energies have the maximal value (up to hundreds of meV) in rectangular nanowires, while in rhombic ones they are almost absent. The shape dependence is shown to be similar in nanowires with different point symmetry in a wide range of cross-section sizes.