2004/03/11 by E. L. Ivchenko, M. O. Nestoklon · 2 citations
Engineering · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #Chalcogenide Semiconductor Thin Films #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.70.235332
published as Phys. Rev. B 70, 235332 (2004) · 9 pages, 6 figures, submitted to Phys. Rev. B
arxiv created 2004/03/11 · openalex publication_date 2004/12/01 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We have developed a tight-binding theory to study electronic and optical properties of type-II heterostructures CA/C^\ensuremath'A^\ensuremath' grown from the zinc blende semiconductors CA and C^\ensuremath'A^\ensuremath' along the crystallographic direction [001]. The sp3s* nearest-neighbor tight-binding model with allowance for the spin-orbit interaction is used to calculate the energy states and the in-plane linear polarization of the spatially indirect band-edge photoluminescence of InAs/AlSb and ZnSe/BeTe multilayered structures. The interface parameters for a pair of the nonstandard planes C\text\ensuremath-A^\ensuremath' or C^\ensuremath'\text\ensuremath-A are considered as fitting variables. A wide range of these parameters are shown to allow Tamm-like hole states localized at the interfaces. The theory leads to giant values of the light polarization in both type-II heterosystems in agreement with existing experimental findings.