1998/03/05 by S. H. Tessmer, P. I. Glicofridis, R. C. Ashoori +2 · 12 citations
Physics and Astronomy · #Quantum and electron transport phenomena #Surface and Thin Film Phenomena #Topological Materials and Phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1038/32112
published as Nature, vol. 392, p.51, 1998 · 6 pages, 4 figures
openalex publication_date 1998/03/05 · arxiv created 1998/11/10 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
The unusual properties of two-dimensional electron systems that give rise to the quantum Hall effect have prompted the development of new microscopic models for electrical conduction. The bulk properties of the quantum Hall effect have also been studied experimentally using a variety of probes including transport, photoluminescence, magnetization, and capacitance measurements. However, the fact that two-dimensional electron systems typically exist some distance (about 100 nm) beneath the surface of the host semiconductor has presented an important obstacle to more direct measurements of microscopic electronic structure in the quantum Hall regime. Here we introduce a cryogenic scanning-probe technique-- subsurface charge accumulation imaging-- that permits very high resolution examination of systems of mobile electrons inside materials. We use it to image directly the nanometer-scale electronic structures that exist in the quantum Hall regime.