Non-Gaussian distribution of nearest-neighbour Coulomb peak spacings in metallic single-electron transistors

1999/09/08 by M Furlan, M. Furlan, T Heinzel +7
Physics and Astronomy · #Aluminium #Charge (physics) #Coulomb #Coulomb blockade #Distribution (mathematics) #GaN-based semiconductor devices and materials #Metal #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Transistor #cond-mat.mes-hall

paper · pdf · doi:10.1209/epl/i2000-00158-3

published as Europhys. Lett. 49 (3), pp. 369-375 (2000) · submitted to Europhys. Lett

arxiv created 1999/09/08 · openalex publication_date 2000/02/01 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

The distribution of nearest-neighbour spacings of Coulomb blockade oscillation peaks in normal conducting aluminum single-electron transistors is found to be non-Gaussian. A pronounced tail to reduced spacings is observed, which we attribute to impurity-specific parametric charge rearrangements close to the transistor. Our observation may explain the absence of a Wigner-Dyson distribution in the experimental nearest-neighbour spacing distributions in semiconductor quantum dots.

Citations

• Subsurface charge accumulation imaging of a quantum Hall liquid
• Noise in Al single electron transistors of stacked design
• Statistics of conductance oscillations of a quantum dot in the Coulomb-blockade regime
• Random-matrix theory of quantum transport