Noise in Al single electron transistors of stacked design

1998/04/17 by V. A. Krupenin, D. Е. Presnov, D. E. Presnov +4 · 4 citations
Engineering · Physics and Astronomy · #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena #Surface and Thin Film Phenomena #cond-mat.mes-hall

paper · pdf · doi:10.1063/1.368474

published as J. Appl. Phys. 84, 3212-3215 (1998) · 4 pages of text with 1 table and 5 figures

arxiv created 1998/04/17 · openalex publication_date 1998/09/15 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We have fabricated and examined several Al single electron transistors whose small islands were positioned on top of a counterelectrode and hence did not come into contact with a dielectric substrate. The equivalent charge noise figure of all transistors turned out to be surprisingly low, (2.5–7)×10−5e/Hz at f=10 Hz. Although the lowest detected noise originates mostly from fluctuations of background charge, the noise contribution of the tunnel junction conductances was, on occasion, found to be dominant.

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