1999/07/06 by H. Scherer, Th. Weimann, T. Weimann +5
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.371778
published as J. Appl. Phys. 86, p. 6956-6964 (1999) · 19 pages, 9 figures
arxiv created 1999/07/06 · openalex publication_date 1999/12/15 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We report about the fabrication and analysis of the properties of Cr/CrOx/Cr tunnel junctions and single-electron tunneling transistors, prepared by different variants of direct-writing multilayer technique. In all cases, the chromium oxide tunnel barriers were formed in air under ambient conditions. From the experiments on single junctions, values for the effective barrier height and thickness were derived. For the all-chromium single-electron tunneling transistors, we achieved minimal junction areas of 17×60 nm2 using a scanning transmission electron microscope for the e-beam exposure on Si3N4 membrane substrate. We discuss the electrical performance of the transistor samples as well as their noise behavior.