2007/03/31 by A. E. Gildemeister, Thomas Ihn, T. Ihn +5
Chemistry · Physics and Astronomy · #Chemistry #Composite material #Force Microscopy Techniques and Applications #In situ #Materials science #Microscope #Microscopy #Nanostructure #Nanotechnology #Near-field scanning optical microscope #Optical microscope #Optics #Optoelectronics #Physics #Quantum and electron transport phenomena #Resolution (logic) #Scanning capacitance microscopy #Scanning confocal electron microscopy #Scanning electron microscope #Scanning gate microscopy #Scanning ion-conductance microscopy #Scanning probe microscopy #Surface and Thin Film Phenomena #Vibrational analysis with scanning probe microscopy #cond-mat.mes-hall #physics.ins-det
paper · pdf · doi:10.1063/1.2742314
published as Appl. Phys. Lett. 90, 213113 (2007) · 3 pages, 1 figure, minor changes to fit published version
openalex publication_date 2007/05/21 · arxiv created 2007/06/27 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
In scanning gate microscopy, where the tip of a scanning force microscope is used as a movable gate to study electronic transport in nanostructures, the shape and magnitude of the tip-induced potential are important for the resolution and interpretation of the measurements. Contaminations picked up during topography scans may significantly alter this potential. The authors present an in situ high-field treatment of the tip that improves the tip-induced potential. A quantum dot was used to measure the tip-induced potential.