2009/12/31 by Tomohiro Otsuka, Eisuke Abe, Yasuhiro Iye +1
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Surface and Thin Film Phenomena #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.81.245302
published as Phys. Rev. B 81, 245302 (2010) · 5 pages, 5 figures
arxiv created 2010/03/25 · openalex publication_date 2010/06/02 · arxiv updated 2011/06/14 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We demonstrate a method for locally probing the electronic states in the quantum Hall regime utilizing a side-coupled quantum dot positioned at an edge of a Hall bar. By measuring the tunneling of electrons from the Hall bar into the dot, we acquire information on the local electrochemical potential and electron temperature. Furthermore, this method allows us to observe the spatial modulation of the electrostatic potential at the edge state due to many-body screening effect.