2003/06/17 by Kazunori Ueno, K. Ueno, Isao Inoue +5
Engineering · Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #Ferroelectric and Piezoelectric Materials #Semiconductor materials and devices #cond-mat.mtrl-sci #cond-mat.str-el
paper · pdf · doi:10.1063/1.1605806
published as Appl.Phys.Lett. 83(2003), 1755
arxiv created 2003/06/17 · openalex publication_date 2003/08/29 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
A field-effect transistor has been constructed that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel. This device functions as an n-type accumulation-mode device. The device was fabricated at room temperature by sputter-deposition of amorphous Al2O3 films as a gate insulator on the SrTiO3 substrate. The field-effect (FE) mobility is 0.1 cm2/V s and on-off ratio exceeds 100 at room temperature. The temperature dependence of the FE mobility down to 2 K shows a thermal-activation-type behavior with an activation energy of 0.6 eV.