2015/11/07 by Amit Verma, Santosh Raghavan, Verma, Amit +5
Engineering · Materials Science · #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Ferroelectric and Negative Capacitance Devices #Ferroelectric and Piezoelectric Materials #Materials Science (cond-mat.mtrl-sci)
paper · pdf · doi:10.48550/arxiv.1511.02293
openalex publication_date 2015/11/07 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We report the temperature dependent capacitance-voltage characteristics of Pt/SrTiO3 Schottky diodes fabricated using compressively strained SrTiO3 thin films grown on (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) substrates. The measurements reveal a divergence of the out of plane dielectric constant of SrTiO3 peaked at ~140K, implying a ferroelectric transition. A Curie-Weiss law fit to the zero-bias dielectric constant suggests a Curie temperature of ~56 K. This observation provides experimental confirmation of the theoretical prediction of out of plane ferroelectricity in compressively strained SrTiO3 thin films grown on LSAT substrate. We also discuss the roles of the field-dependent dielectric constant and the interfacial layer in SrTiO3 on the extraction of the Curie temperature.