2009/09/15 by Joseph H. Ngai, J. H. Ngai, Y. Segal +12
Engineering · Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Ferroelectric and Piezoelectric Materials #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and devices #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.0909.2834
4 pages, 5 figures
arxiv created 2009/09/15 · openalex publication_date 2009/09/15 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We present low temperature magnetoresistance measurements of Ar-irradiated SrTiO3 under an applied electrostatic field. The electric field, applied through a back gate bias, modulates both the mobility and sheet density, with a greater effect on the former. For high mobilities, 3-dimensional orbital magnetoresistance is observed. For low mobilities, negative magnetoresistance that is consistent with the suppression of 2-dimensional weak-localization is observed. The crossover from 3 to 2-dimensional transport arises from a modulation in the carrier confinement, which is enhanced by the electric field dependent dielectric constant of SrTiO3. The implications of our results on the development of oxide electronic devices will be discussed.