2019/09/27 by A. E. M. Smink, Briliant Adhi Prabowo, Smink, A. E. M. +11
Engineering · Materials Science · #Applied Physics (physics.app-ph) #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Ferroelectric and Negative Capacitance Devices #Magnetic and transport properties of perovskites and related materials #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
paper · pdf · doi:10.48550/arxiv.1909.12586
openalex publication_date 2019/09/27 · openalex created_date 2019/10/03 · openalex updated_date 2026/07/28
At the LaAlO3-SrTiO3 interface, electronic phase transitions can be triggered by modulation of the charge carrier density, making this system an excellent prospect for the realization of versatile electronic devices. Here, we report repeatable transistor operation in locally gated LaAlO3-SrTiO3 field-effect devices of which the LaAlO3 dielectric is only four unit cells thin, the critical thickness for conduction at this interface. This extremely thin dielectric allows a very efficient charge modulation of ∼3.2×1013 cm-2 within a gate-voltage window of ±1 V, as extracted from capacitance-voltage measurements. These also reveal a large stray capacitance between gate and source, presenting a complication for nanoscale device operation. Despite the small LaAlO3 thickness, we observe a negligible gate leakage current, which we ascribe to the extension of the conducting states into the SrTiO3 substrate.