In-Situ Surface Energy Engineering for ALD-Derived Highly Reliable Top Gate In 2 O 3 Thin-Film Transistors

2025/09/05 by Jeong Eun Oh, Cheol Hee Choi, Taikyu Kim +9
Engineering · Materials Science · #Thin-Film Transistor Technologies #ZnO doping and properties #Semiconductor materials and devices

paper · doi:10.1109/led.2025.3606470

Abstract

This study investigates the effects ofin-situsurface energy engineering applied prior to the deposition of the top gate dielectric on the electrical performance of In2O3TFTs. O2plasma treatment effectively reduces the interfacial trap density at the In2O3/gate dielectric interface, enhancing the overall device performance. Notably, In2O3TFTs subjected to an optimized oxygen plasma treatment duration of 3 sec exhibited significant improvements in electrical characteristics, including a high field-effect mobility of 84.3 cm²/V·s, a steep subthreshold swing of 76.8 mV/dec, and a minimal threshold voltage shift of 20 mV under rigorous bias temperature stress conditions (an electric field of 4 MV/cm at 85 °C for 3600 sec).

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