2024/04/17 by Tianyu Tang, Tang, Tianyu, Preetam Dacha +27
Engineering · Materials Science · #Applied Physics (physics.app-ph) #FOS: Physical sciences #Semiconductor materials and devices #Thin-Film Transistor Technologies #Transition Metal Oxide Nanomaterials
paper · pdf · doi:10.48550/arxiv.2404.12411
openalex publication_date 2024/04/17 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/30
Metal oxide (MO) semiconductors are widely used in electronic devices due to their high optical transmittance and promising electrical performance. This work describes the advancement toward an eco-friendly, streamlined method for preparing thin-film transistors (TFTs) via a pure water-solution blade-coating process with focus on a low thermal budget. Low temperature and rapid annealing of triple-coated indium oxide thin-film transistors (3C-TFTs) and indium oxide/zinc oxide/indium oxide thin-film transistors (IZI-TFTs) on a 300 nm SiO2 gate dielectric at 300 ∘C for only 60 s yields devices with an average field effect mobility of 10.7 and 13.8 cm2/Vs, respectively. The devices show an excellent on/off ratio (>106), and a threshold voltage close to 0 V when measured in air. Flexible MO-TFTs on polyimide substrates with AlOx dielectrics fabricated by rapid annealing treatment can achieve a remarkable mobility of over 10 cm2/Vs at low operating voltage. When using a longer post-coating annealing period of 20 min, high-performance 3C-TFTs (over 18 cm2/Vs) and IZI-TFTs (over 38 cm2/Vs) using MO semiconductor layers annealed at 300 ∘C are achieved.