2014/05/17 by F. K. Shan, Fukai Shan, A. Liu +16
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and devices #Thin-Film Transistor Technologies #ZnO doping and properties #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1405.4373
This paper has been withdraw by the author due to some critical errors in one figure
openalex publication_date 2014/05/17 · arxiv created 2014/05/24 · arxiv updated 2014/05/27 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We reported here a high-performance In2O3/InZnO bilayer metal-oxide (BMO) thin-film transistor (TFT) using ultra-thin solution-processed ZrOx dielectric. A thin layer of In2O3 offers a higher carrier concentration, thereby maximizing the charge accumulation and yielding high carrier mobility. A thick layer of InZnO controls the charge conductance resulting in low off-state current and suitable threshold voltage. As a consequence, the BMO TFT showed higher filed-effect mobility (37.9 cm2/V s) than single-layer InZnO TFT (7.6 cm2/V s). More importantly, an on/off current ratio of 109, a subthreshold swing voltage of 120 mV/decade, as well as a threshold voltage shift (less than 0.4 V) under bias stress for 2.5 hours were obtained simultaneously. These promising properties are obtained at a low operation voltage of 3 V. This work demonstrates that the BMO TFT has great potential applications as switching transistor and low-power devices.