2012/04/01 by Jie Jiang, Qing Wan, Jiang, Jie +7
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Chemical Physics (physics.chem-ph) #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Nanowire Synthesis and Applications #Thin-Film Transistor Technologies #cond-mat.mtrl-sci #physics.chem-ph
paper · pdf · doi:10.48550/arxiv.1204.0169
25 pages, 7 figures
arxiv created 2012/04/01 · openalex publication_date 2012/04/01 · arxiv updated 2012/04/03 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Transistors are the fundamental building block of modern electronic devices. So far, all transistors are based on various types of semiconductor junctions. The most common bipolar-junction transistors and metal-oxide-semiconductor field-effect transistors contain p-n junctions to control the current, depending on applied biases across the junctions. Thin-film transistors need metal-semiconductor junctions for injecting and extracting electrons from their channels. Here, by coating a heavily-doped thin indium-tin-oxide (ITO) film through a shadow mask onto a biopolymer chitosan/ITO/glass substrate, we can have a high-performance junctionless transparent organic-inorganic hybrid thin film transistor. This could be the simplest transistor in the world, to our knowledge, not only in its structure, but also its fabrication process. In addition, the device performance is found to be greatly enhanced using a reinforced chitosan/SiO2 hybrid bilayer dielectric stack. Our results clearly show that this architecture can lead to a new class of low-cost transistors.