Flexible transistors exploiting P3HT on paper substrates and graphene oxide films as gate dielectrics: proof of concept

2013/02/06 by Luca Valentini, Valentini, Luca, Marta Cardinali +11
Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.1302.1291

13 pages, 3 figures accepted in Science of Advanced Materials

arxiv created 2013/02/06 · arxiv updated 2013/02/07

Abstract

In this paper we report: the use of GO in aqueous solution as a gate dielectric material, its application to a MOS transistor based on organic semiconductor and the use of paper as substrate material.

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