2003/04/04 by H. Kempa, Kempa, H., P. Esquinazi +1
Materials Science · Physics and Astronomy · #Carbon Nanotubes in Composites #Diamond and Carbon-based Materials Research #FOS: Physical sciences #Graphene research and applications #Strongly Correlated Electrons (cond-mat.str-el) #cond-mat.str-el
paper · pdf · doi:10.48550/arxiv.cond-mat/0304105
3 pages, 3 figures, submitted to Europ. Phys. J. AP
arxiv created 2003/04/04 · openalex publication_date 2003/04/04 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Inspired by the striking similarities between the metal-insulator transitions in graphite and Si-MOSFET's and the recent attention to charge doping in carbon-based materials, we have made attempts to fabricate a field-effect transistor based on graphite. A relatively thick layer of boron nitride turned out to be able to serve as a gate dielectric. This, however, limits the achievable electric gate field, which might be the reason for our observation of no charge-doping effect.