2021/03/05 by Debi P. Nayak, Nayak, Debiprasad, Kumar, Yakala Ravi +4
Engineering · #Advanced DC-DC Converters #Advancements in Semiconductor Devices and Circuit Design #Applied Physics (physics.app-ph) #FOS: Physical sciences #Silicon Carbide Semiconductor Technologies
paper · pdf · doi:10.48550/arxiv.2104.09271
openalex publication_date 2021/03/05 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
In a hard switched MOSFET based converter, turn-on energy losses is predominant in the total switching loss. At higher junction temperature the turn-on energy loss further increases due to the reverse recovery effect of the complementary MOSFETs body diode in a half-bridge configuration. Estimation of the switching loss under different operating conditions at an early design stage is essential for optimising the thermal design. Analytical switching loss models available in literature are generally used for estimating the switching losses, due to its accuracy and simplicity. In this paper, the inaccuracy in the reported loss models due to non inclusion of temperature dependent reverse recovery characteristics of body diode, is investigated. A structured method to determine the temperature-dependent switching loss of a SiC MOSFET in a half-bridge is presented. A simple methodology has been proposed to analyze the carrier lifetime's temperature dependencies of a SiC MOSFETs body diode. Device parameters from a 1.2kV/36A SiC MOSFETs datasheet are used for developing the loss model and experimental validation of the model.