2023/08/24 by José Miguel Sanz-Alcaine, Sanz-Alcaine, Jose Miguel, Francisco José Perez-Cebolla +9
Engineering · #Advancements in Semiconductor Devices and Circuit Design #Computer science #Current (fluid) #Electrical engineering #Electronic engineering #Engineering #FOS: Electrical engineering #Linearity #Materials science #Physics #Power (physics) #Power semiconductor device #Semiconductor materials and devices #Silicon Carbide Semiconductor Technologies #Systems and Control (eess.SY) #Thermal #Transistor #Transistor model #Voltage #electronic engineering #information engineering
paper · pdf · doi:10.48550/arxiv.2308.12685
openalex publication_date 2023/08/24 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
This paper presents and evaluates a novel method for generating power losses on transistors avoiding high currents. These could heat up the circuit tracks, affecting the accurate thermal modeling of the system. The proposed procedure is based on the transistor current regulation with low gate voltages and the linearity between power and temperature, being useful for all transistor technologies (Si, SiC and GaN). Through this method, low DC currents are enough to bring transistors to their thermal limits. Thermal stability issues and their differences between technologies are discussed and an experimental validation of the method is carried out.